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半导体学报 2003
Device Model for SOI P-Type Bipolar-MOS Hybrid Mode Transistors with Strained SiGe Layer
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Abstract:
Based on the structure of SOI MOSFET with a buried strained SiGe layer,a novel bipolar-MOS hybrid mode transistor (SiGe SOI BMHMT) is generated by connecting the gate to its substrate.A mathematic model for such a transistor of p type is presented grounding on the numerical device simulation carried out by the software SIVACO.It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply (<0.7V).The equation of its I-V characteristics is then deduced according to the method of charge increment.The calculated results of this equation are consistent with the ones from the numerical device simulation.