%0 Journal Article
%T Device Model for SOI P-Type Bipolar-MOS Hybrid Mode Transistors with Strained SiGe Layer<br>SOI结构P型SiGe沟道混合模式晶体管器件模型研究
%A Xia Kejun
%A Li Shurong
%A Wang Chun
%A Guo Weilian
%A Zheng Yunguang
%A Chen Peiyi
%A Qian Peixin
%A <br>夏克军
%A 李树荣
%A 王纯
%A 郭维廉
%A 郑云光
%A 陈培毅
%A 钱佩信
%J 半导体学报
%D 2003
%I 
%X Based on the structure of SOI MOSFET with a buried strained SiGe layer,a novel bipolar-MOS hybrid mode transistor (SiGe SOI BMHMT) is generated by connecting the gate to its substrate.A mathematic model for such a transistor of p type is presented grounding on the numerical device simulation carried out by the software SIVACO.It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply (<0.7V).The equation of its I-V characteristics is then deduced according to the method of charge increment.The calculated results of this equation are consistent with the ones from the numerical device simulation.
%K BMHMT
%K device model
%K SiGe
%K SOI<br>BMHMT
%K 器件模型
%K SiGe
%K SOI
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9E6A592A26F9C60F&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=7737D2F848706113&eid=E3094127AA4ABC1A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11