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半导体学报 2003
Influence of Backsurface Ar+ Bombardment on Low-Frequency Noise Characteristics of n-MOSFET
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Abstract:
Influence of backsurface Ar bombardment on the low-frequency noise characteristics of n-MOSFET is investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET,thus the low-frequency noise spectral density in the linear region and the saturation region can be improved.The decrease of the low-frequency noise can be explained by the mobility fluctuations model and the carrier number fluctuations model.All these change may be caused from the alteration of the effective electron mobility in the inversion layer,the fixed charge density and the interface-state density after Ar backsurface bombardment.