%0 Journal Article
%T Influence of Backsurface Ar+ Bombardment on Low-Frequency Noise Characteristics of n-MOSFET<br>背面Ar~+轰击对n-MOSFET低频噪声的影响
%A Huang Meiqian
%A Li Guanqi
%A Li Bin
%A Zeng Shaohong
%A <br>黄美浅
%A 李观启
%A 李斌
%A 曾绍鸿
%J 半导体学报
%D 2003
%I 
%X Influence of backsurface Ar bombardment on the low-frequency noise characteristics of n-MOSFET is investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET,thus the low-frequency noise spectral density in the linear region and the saturation region can be improved.The decrease of the low-frequency noise can be explained by the mobility fluctuations model and the carrier number fluctuations model.All these change may be caused from the alteration of the effective electron mobility in the inversion layer,the fixed charge density and the interface-state density after Ar backsurface bombardment.
%K backsurface Ar
%K bombardment
%K low-frequency noise
%K mobility
%K interface-state<br>背面Ar+轰击
%K 低频噪声
%K 迁移率
%K 界面态
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D40FC6B9738B6685&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=F416A9924F23B020&eid=A2745AA1110798CA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=34