An Cascode S2I Memory Cell and Its Performance
共源-共栅组态S~2I电流存储单元及其性能

A new cascode S 2I memory cell (hereinafter called "CS 2I" memory cell) is presented to improve the weak points of the prototype S 2I memory cell.The speed of CS 2I memory cell increases 1.6 times than that of the prototype S 2I memory cell with the same transistor dimension.Moreover,applying the CS 2I and the S 2I cell to the systems separately,the simulation results of HSPICE indicate that accuracy for the cascode S 2I memory cell is about 5 times higher than the CS 2I in delay cell,and a third harmonic is decreased by 15dB in double sampling bilinear integrator.