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半导体学报 2001
Fabrication of Si Radiation Detector with Plane Technology
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Abstract:
The fabrication of PIN silicon detector has been described in details with some advanced microelectronic technologies,including oxidation,lithography and implantation and annealing.Slowly decrease the temperature after HCl handling,a low dark current (reverse current) can be obtained.At -5V,the performanc of the detector is perfect,and the leakage current is 10nA/cm 2.The relationship between the dark current and the minority carrier lifetime has also been discussed,as well as the measuring method of the minority carrier lifetime.
