%0 Journal Article
%T Fabrication of Si Radiation Detector with　Plane Technology<br>平面工艺辐射探测器的研制
%A ZHANG Tai ping
%A ZHANG Lu
%A NING Bao jun
%A TIAN Da yu
%A LIU Shi mei
%A WANG Wei
%A ZHANG Jie tian
%A GUO Zhao qiao
%A CHEN Shi yuan
%A <br>张太平
%A 张录
%A 宁宝俊
%A 田大宇
%A 刘诗美
%A 王玮
%A 张洁天
%A 郭昭乔
%A 陈世媛
%J 半导体学报
%D 2001
%I 
%X The fabrication of PIN silicon detector has been described in details with some advanced microelectronic technologies,including oxidation,lithography and implantation and annealing.Slowly decrease the temperature after HCl handling,a low dark current (reverse current) can be obtained.At -5V,the performanc of the detector is perfect,and the leakage current is 10nA/cm 2.The relationship between the dark current and the minority carrier lifetime has also been discussed,as well as the measuring method of the minority carrier lifetime.
%K PIN diode
%K dark current
%K recombination center
%K minority lifetime<br>PIN二极管
%K 暗电流
%K 复合中心
%K 少子寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B727ED045573D5B4&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=38B194292C032A66&sid=0954045FA0C6885F&eid=FA88DCCE84EA0A56&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=3