Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
采用深槽刻蚀和外延生长技术的700V超结MOSFETs

Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. oindent