%0 Journal Article
%T Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth<br>采用深槽刻蚀和外延生长技术的700V超结MOSFETs
%A Li Zehong
%A Ren Min
%A Zhang Bo
%A Ma Jun
%A Hu Tao
%A Zhang Shuai
%A Wang Fei
%A Chen Jian
%A <br>李泽宏
%A 任敏
%A 张波
%A 马俊
%A 胡涛
%A 张帅
%A 王非
%A 陈俭
%J 半导体学报
%D 2010
%I 
%X Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. oindent
%K superjunction
%K deep trench etching
%K epitaxial growth
%K power MOSFET oindent<br>超结
%K 深槽刻蚀
%K 外延生长
%K 功率MOSFET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=88346EA045F8AE62EB7FBA0578974D6C&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=5D311CA918CA9A03&sid=A5A2203BC075349C&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0