Low Dose Rate Ionizing Radiation Response of Bipolar Transistors
双极晶体管的低剂量率电离辐射效应

The effect of low dose rate ionizing radiation is investigated for npn and pnp transistors which are sensitive to the enhanced low dose rate damage.The results show that the current gain degradation of bipolar transistors is larger at low dose-rate than high dose-rate,and npn transistor is more sensitive than pnp transistor.Possible mechanisms for enhanced damage are discussed.