%0 Journal Article
%T Low Dose Rate Ionizing Radiation Response of Bipolar Transistors<br>双极晶体管的低剂量率电离辐射效应
%A Zhang Hualin
%A Lu Wu
%A Ren Diyuan
%A Guo Qi
%A Yu Xuefeng
%A He Chengfa
%A Erkin
%A Cui Shuai
%A <br>张华林
%A 陆妩
%A 任迪远
%A 郭旗
%A 余学锋
%A 何承发
%A 艾尔肯
%A 崔帅
%J 半导体学报
%D 2004
%I 
%X The effect of low dose rate ionizing radiation is investigated for npn and pnp transistors which are sensitive to the enhanced low dose rate damage.The results show that the current gain degradation of bipolar transistors is larger at low dose-rate than high dose-rate,and npn transistor is more sensitive than pnp transistor.Possible mechanisms for enhanced damage are discussed.
%K low dose rate
%K ionizing radiation
%K bipolar transistor
%K space charge<br>低剂量率
%K 电离辐射
%K 双极晶体管
%K 空间电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B15A5B8C24A62941&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=A43DA3A1D8511541&eid=0C0A5470C59ABA43&journal_id=1674-4926&journal_name=半导体学报&referenced_num=8&reference_num=12