TEM Analysis of Silicon Surface Oxidation Induced by Electron Beam Irradiation
TEM电子束诱导硅表面氧化的分析

It was verified that a clean silicon surface experienced an oxidation induced by electronbeam irradiation in AES. This paper gives the experiment results of a clean silicon surface irradiatedby electron beam in TEM. It shows that the silicon surface oxidation induced by electronbeam irradiation in TEM is similar to thatin AES.The results show that SiO_2 microcrystalsare produced. The resources of oxygen mainly cone from the local oxygen rich region in singlecrystal silicon and the residual gases in vacuum.