%0 Journal Article
%T TEM Analysis of Silicon Surface Oxidation Induced by Electron Beam Irradiation<br>TEM电子束诱导硅表面氧化的分析
%A Yang Deren/Semiconductor Matcrial Institute
%A Zhejiang UniversityYao Hognian/Semiconductor Matcrial Institute
%A Zhejiang University
%A <br>杨德仁
%A 姚鸿年
%J 半导体学报
%D 1990
%I 
%X It was verified that a clean silicon surface experienced an oxidation induced by electronbeam irradiation in AES. This paper gives the experiment results of a clean silicon surface irradiatedby electron beam in TEM. It shows that the silicon surface oxidation induced by electronbeam irradiation in TEM is similar to thatin AES.The results show that SiO_2 microcrystalsare produced. The resources of oxygen mainly cone from the local oxygen rich region in singlecrystal silicon and the residual gases in vacuum.
%K Electron beam
%K Oxidation
%K silicon surface
%K TEM<br>硅表面
%K 氧化
%K 电子束诱导
%K TEM
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C2BC9812F612422B&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=849A5A9D85EBE6D4&eid=2C8B50BA95995EA2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4