Characteristics of Electron Tunneling Based on Two-Coupled Quantum Dot System
耦合双量子点中基态电子的隧穿特性

The characteristics of an excess electron tunneling in a qubit based on the two coupled quantum dots in Si/SiO 2 system is investigated.Two of these qubits could realize quantum Controlled-Not gate.The simulated results demonstrate that the state and transfer of an excess electron in the coupled dots could well be controlled by external gate voltage with pulse time,which allows for being adjusted by the structure parameters,such as barrier thickness and dot size,of the dot system through experimental operation.It should be practically helpful for making quantum computer.