%0 Journal Article
%T Characteristics of Electron Tunneling Based on Two-Coupled Quantum Dot System<br>耦合双量子点中基态电子的隧穿特性
%A Xiao Jie
%A Shi Yi
%A Xiong Shijie
%A Zhang Rong
%A Zheng Youdou
%A <br>肖洁
%A 施毅
%A 熊诗杰
%A 张荣
%A 郑有炓
%J 半导体学报
%D 2004
%I 
%X The characteristics of an excess electron tunneling in a qubit based on the two coupled quantum dots in Si/SiO 2 system is investigated.Two of these qubits could realize quantum Controlled-Not gate.The simulated results demonstrate that the state and transfer of an excess electron in the coupled dots could well be controlled by external gate voltage with pulse time,which allows for being adjusted by the structure parameters,such as barrier thickness and dot size,of the dot system through experimental operation.It should be practically helpful for making quantum computer.
%K qubit
%K tunneling time
%K quantum dot<br>量子比特
%K 隧穿时间
%K 量子点
%K 耦合双量子点
%K 基态电子
%K 隧穿时间
%K 特性
%K Quantum
%K Dot
%K System
%K Based
%K Tunneling
%K Electron
%K 工作电压
%K 工作频率
%K 实验
%K 变化曲线
%K 特征
%K 模拟
%K 发生
%K 结构参数
%K 尺寸
%K 厚度
%K 势垒
%K 共振隧穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=78B13082C6FE5255&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=16D8618C6164A3ED&eid=ECE8E54D6034F642&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19