OALib Journal期刊
ISSN: 2333-9721
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Photocurrent Investigation of Strained-Layer InGaAs-GaAs Multiple Quantum Wells 应变层多量子阱InGaAs—GaAs的光电流谱研究
Fang Xiaoming/Laboratory for Infrared Physics, Academia Sinica, ShanghaiShen Xuechu/Laboratory for Infrared Physics, Academia Sinica, ShanghaiHouHongqi/Institute of Physics, Academia Sinica, BeijingFeng Wei/Institute of Physics, Academia Sinica, BeijingZhou Junming/Institute of Physics, Academia Sinica, Beijing, 方晓明, 沈学础, 侯宏启, 冯巍, 周钧铭
Keywords: Strained-layer multiple quantum wells,Band offset,Exciton transition InGaAs-GaAs,量子阱,光电谱,应变层
Abstract:
在10—300K温度范围,用光电流谱方法研究了未掺杂的x为0.1、0.15和0.2,InGaAs层厚度为8和15nm的In_xGa_(1-x)As—GaAs应变层多量子阱的能带结构。在1.240—1.550eV光子能量范围,除11H、11L和22H激子跃迁以及GaAs的基本带间跃迁外,还观察到束缚子带到连续带的跃迁。对样品In_(0.15)Ga_(0.85)As(8nm)-GaAs(15nm),观察到11H重空穴激子的2s及其它激发态跃迁,由此得到激子结合能的近似值,约为8meV。重空穴能带台阶Q_v=0.40±0.02。应变效应使得电子和重空穴束缚在InGaAs层,而轻空穴束缚在GaAs层。
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