%0 Journal Article
%T Photocurrent Investigation of Strained-Layer InGaAs-GaAs Multiple Quantum Wells<br>应变层多量子阱InGaAs—GaAs的光电流谱研究
%A Fang Xiaoming/Laboratory for Infrared Physics
%A Academia Sinica
%A ShanghaiShen Xuechu/Laboratory for Infrared Physics
%A Academia Sinica
%A ShanghaiHouHongqi/Institute of Physics
%A Academia Sinica
%A BeijingFeng Wei/Institute of Physics
%A Academia Sinica
%A BeijingZhou Junming/Institute of Physics
%A Academia Sinica
%A Beijing
%A <br>方晓明
%A 沈学础
%A 侯宏启
%A 冯巍
%A 周钧铭
%J 半导体学报
%D 1990
%I 
%X 在10—300K温度范围,用光电流谱方法研究了未掺杂的x为0.1、0.15和0.2,InGaAs层厚度为8和15nm的In_xGa_(1-x)As—GaAs应变层多量子阱的能带结构。在1.240—1.550eV光子能量范围,除11H、11L和22H激子跃迁以及GaAs的基本带间跃迁外,还观察到束缚子带到连续带的跃迁。对样品In_(0.15)Ga_(0.85)As(8nm)-GaAs(15nm),观察到11H重空穴激子的2s及其它激发态跃迁,由此得到激子结合能的近似值,约为8meV。重空穴能带台阶Q_v=0.40±0.02。应变效应使得电子和重空穴束缚在InGaAs层,而轻空穴束缚在GaAs层。
%K Strained-layer multiple quantum wells
%K Band offset
%K Exciton transition<br>InGaAs－GaAs
%K 量子阱
%K 光电谱
%K 应变层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B970F900D7E61925&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=B7BFA4B351E4C682&eid=B4E8EA49DAAEB84F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=0