Study on Mechanism of Pd-Ir alloy Gate MOS Transistor Sensitive to Ammonia
Pd-Ir合金栅MOS晶体管氨气敏感机理的研究

A new semiconductor sensor-Pd-Ir alloy gate MOS transistor is reporfed. The structureand fabrication of the device are described.The mechanism of the device sensitive to ammoniahas been investigated using chemistry kinetics.The quantitative relationship betweenammonia concentration and threshold voltage change has been obtained.The theory is in agreementwith the experimental results.