%0 Journal Article
%T Study on Mechanism of Pd-Ir alloy Gate MOS Transistor Sensitive to Ammonia<br>Pd-Ir合金栅MOS晶体管氨气敏感机理的研究
%A Zhang Weixin/
%A <br>张维新
%A 赵玲娟
%J 半导体学报
%D 1990
%I 
%X A new semiconductor sensor-Pd-Ir alloy gate MOS transistor is reporfed. The structureand fabrication of the device are described.The mechanism of the device sensitive to ammoniahas been investigated using chemistry kinetics.The quantitative relationship betweenammonia concentration and threshold voltage change has been obtained.The theory is in agreementwith the experimental results.
%K Pd-Ir alloy gate
%K ammonia-sensitivity
%K catalysis decomposition
%K dipolar layer
%K sensitive mechanism
%K MOS transistor<br>半导体
%K 敏感器件
%K MOD晶体管
%K 氨气敏
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38623F124333E83BD6&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=65FC738C50B41E43&eid=3B2BF7AC5674E8E2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1