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半导体学报 1989
Influence of Disordered Regions on Minority Carrier Lifetime in Neutron Irradiated Si
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Abstract:
Disordered regions produced by neutron irradiation are highly effective on the degrada-tion of minority carrier lifetime in semiconductors.According to the characteristics of disor-dered regions, the carrier recombination process in silicon involving the regions isanalysed.Aself-consistent computation model is presented.The calculated results of the dependences ofminority lifetime degradation on the defect distribution, doped concentration and excess car-rier density have been obtained.Finally, the results of the disordered-regions model are com-pared with that of the point defect model, and with the measurement data.