全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

Influence of Disordered Regions on Minority Carrier Lifetime in Neutron Irradiated Si
中子辐照损伤区对硅少数载流子寿命的影响

Keywords: Silicon,Minority carriers lifetime,Neutron irradiation,Disordered regions
,少子寿命,中子辐照,无序区

Full-Text   Cite this paper   Add to My Lib

Abstract:

Disordered regions produced by neutron irradiation are highly effective on the degrada-tion of minority carrier lifetime in semiconductors.According to the characteristics of disor-dered regions, the carrier recombination process in silicon involving the regions isanalysed.Aself-consistent computation model is presented.The calculated results of the dependences ofminority lifetime degradation on the defect distribution, doped concentration and excess car-rier density have been obtained.Finally, the results of the disordered-regions model are com-pared with that of the point defect model, and with the measurement data.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133