%0 Journal Article
%T Influence of Disordered Regions on Minority Carrier Lifetime in Neutron Irradiated Si<br>中子辐照损伤区对硅少数载流子寿命的影响
%A Shi Yi/
%A <br>施毅
%A 吴凤美
%A 沈德勋
%A 程开甲
%A 王长河
%J 半导体学报
%D 1989
%I 
%X Disordered regions produced by neutron irradiation are highly effective on the degrada-tion of minority carrier lifetime in semiconductors.According to the characteristics of disor-dered regions, the carrier recombination process in silicon involving the regions isanalysed.Aself-consistent computation model is presented.The calculated results of the dependences ofminority lifetime degradation on the defect distribution, doped concentration and excess car-rier density have been obtained.Finally, the results of the disordered-regions model are com-pared with that of the point defect model, and with the measurement data.
%K Silicon
%K Minority carriers lifetime
%K Neutron irradiation
%K Disordered regions<br>硅
%K 少子寿命
%K 中子辐照
%K 无序区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BDB4AF69405AC459&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=B7DE0F3CA34DA149&eid=DC06EBDBAF4E06D3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=1