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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Ion Implantation and Thermal Annealing of Ni/Si, Pt/Si and Ir/Si
Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火
Wu Chunwu/Institute of Semiconductors, Academia SinicaYin Shiduan/Institute of Semiconductors, Academia SinicaZhang Jingping/Institute of Semiconductors, Academia SinicaFan Tiwen/Institute of Semiconductors, Academia SinicaLiu Jiarui/Institute of Physics, Academia SinicaZhu Peiran/Institute of Physics, Academia Sinica,
吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然
Keywords: Ion implantation,Ion mixing,Silicide,Chemical phase,Enhanced-liffusion
离子注入,离子束混合,硅化物
Abstract:
本文用RBS,AES,TEM和X射线衍射等实验方法,分析比较了Ni/Si,Pt/Si,Ir/Si系统在室温下As离子混合和热退火的行为.得出在Ni/Si系统中,硅混合量Q_(s1)与剂量Φ的平方根成正比,形成Ni_2Si相.在Pt/Si系中,硅混合量也与剂量的平方根成正比,先后形成Pt_3Si和Pt_2Si相.对Ir/Si系,Q_(s1)与Φ则是线性关系:Q_(s1)=aΦ+b,未测到化学相.实验表明:离子束混合能大大增强金属和硅化物的化学反应.在离子混合和退火形成硅化物的过程中,注入杂质As的分布有显著变化. Full-Text
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