%0 Journal Article
%T Ion Implantation and Thermal Annealing of Ni/Si, Pt/Si and Ir/Si<br>Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火
%A Wu Chunwu/Institute of Semiconductors
%A Academia SinicaYin Shiduan/Institute of Semiconductors
%A Academia SinicaZhang Jingping/Institute of Semiconductors
%A Academia SinicaFan Tiwen/Institute of Semiconductors
%A Academia SinicaLiu Jiarui/Institute of Physics
%A Academia SinicaZhu Peiran/Institute of Physics
%A Academia Sinica
%A <br>吴春武
%A 殷士端
%A 张敬平
%A 范缇文
%A 刘家瑞
%A 朱沛然
%J 半导体学报
%D 1989
%I 
%X 本文用RBS,AES,TEM和X射线衍射等实验方法,分析比较了Ni/Si,Pt/Si,Ir/Si系统在室温下As离子混合和热退火的行为.得出在Ni/Si系统中,硅混合量Q_(s1)与剂量Φ的平方根成正比,形成Ni_2Si相.在Pt/Si系中,硅混合量也与剂量的平方根成正比,先后形成Pt_3Si和Pt_2Si相.对Ir/Si系,Q_(s1)与Φ则是线性关系:Q_(s1)=aΦ+b,未测到化学相.实验表明:离子束混合能大大增强金属和硅化物的化学反应.在离子混合和退火形成硅化物的过程中,注入杂质As的分布有显著变化.
%K Ion implantation
%K Ion mixing
%K Silicide
%K Chemical phase
%K Enhanced-liffusion<br>离子注入
%K 离子束混合
%K 硅化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7FD516D7F4CCAAE9&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=00520952CD4BF212&eid=1C3BB0F444F5E427&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0