Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells
Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells

Strained SiGe/Si multiple quantum wells(MQWs) were grown by cold\|wall ultrahigh vacuum chemical vapor deposition (UHV/CVD).Photoluminescence measurement was performed to study the exciton energies of strained Si 0 84 Ge 0 16 /Si MQWs with SiGe well widths ranging from 4 2nm to 25 4nm.The confinement energy of 43meV is found in the Si 0 84 Ge 0 16 /Si MQWs with well width of 4 2nm.The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model.Experimental and theoretical confinement energies are in good agreement.