%0 Journal Article
%T Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells<br>Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells
%A CHENG Bu
%A |wen
%A LI Dai
%A |zong
%A HUANG Chang
%A |jun
%A ZHANG Chun
%A |hui
%A YU Zhuo
%A YU Jin zhong
%A WANG Qi ming
%A <br>成步文
%A 李代宗
%A 黄昌俊
%A 张春晖
%A 于卓
%A 余金中
%A 王启明
%J 半导体学报
%D 2000
%I 
%X Strained SiGe/Si multiple quantum wells(MQWs) were grown by cold\|wall ultrahigh vacuum chemical vapor deposition (UHV/CVD).Photoluminescence measurement was performed to study the exciton energies of strained Si 0 84 Ge 0 16 /Si MQWs with SiGe well widths ranging from 4 2nm to 25 4nm.The confinement energy of 43meV is found in the Si 0 84 Ge 0 16 /Si MQWs with well width of 4 2nm.The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model.Experimental and theoretical confinement energies are in good agreement.
%K quantum well
%K SiGe
%K quantum confinement effect<br>Ge/Si
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E1DAEF2A88136594&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=C2F76551C0111538&eid=EC34D52BE81085CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13