Study on Short-channel Thin Film CMOS/SIMOX
短沟道薄硅膜CMOS/SIMOX电路的研究
Chen Nanxiang/Inst of Low Energy Nuclear Physics,
Beijing Normal,
UnivShi Yongquan/Shaanxi Micro Electronics InstituteWang Zhonglie/Inst of Low Energy Nuclear Physics,
Beijing Normal,
UnivHuang Chang/Inst of Low Energy Nuclear Physics,
Beijing Normal,
Univ,
陈南翔,
石涌泉,
王忠烈,
黄敞
Keywords: Thin film si,characteristics of sub-threshold,short-channel effect,SIMOX
薄硅源,沟道效应,CMOS／Simox,电路
Abstract:
通过大剂量氧离子注入(150key,2×10~(18)O~+/cm~2)及高温退火(1100℃,8h)便可形成质量较好的SIMOX结构。本文报道了制备在硅膜厚度为160nm的SIMOX结构上的短沟道CMOS/SIMOX电路特性。实验结果表明:薄硅膜器件有抑制短沟道效应(如阈值电压下降)、改善电路的速度性能等优点,因而薄硅膜SIMOX技术更适合亚微米CMOS IC的发展。
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