%0 Journal Article
%T Study on Short-channel Thin Film CMOS/SIMOX<br>短沟道薄硅膜CMOS/SIMOX电路的研究
%A Chen Nanxiang/Inst of Low Energy Nuclear Physics
%A Beijing Normal
%A UnivShi Yongquan/Shaanxi Micro Electronics InstituteWang Zhonglie/Inst of Low Energy Nuclear Physics
%A Beijing Normal
%A UnivHuang Chang/Inst of Low Energy Nuclear Physics
%A Beijing Normal
%A Univ
%A <br>陈南翔
%A 石涌泉
%A 王忠烈
%A 黄敞
%J 半导体学报
%D 1990
%I 
%X 通过大剂量氧离子注入(150key,2×10~(18)O~+/cm~2)及高温退火(1100℃,8h)便可形成质量较好的SIMOX结构。本文报道了制备在硅膜厚度为160nm的SIMOX结构上的短沟道CMOS/SIMOX电路特性。实验结果表明:薄硅膜器件有抑制短沟道效应(如阈值电压下降)、改善电路的速度性能等优点,因而薄硅膜SIMOX技术更适合亚微米CMOS IC的发展。
%K Thin film si
%K characteristics of sub-threshold
%K short-channel effect
%K SIMOX<br>薄硅源
%K 沟道效应
%K CMOS／Simox
%K 电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F0493C5F10F95157&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=407C905D8F0449C4&eid=85002451B65CE0D1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=3