Auger Analysis on p-Type Diffusion Laye (Using Diffusion Galium in SiO2 Series)
p型扩散区(SiO_2/Si系扩Ga)的俄歇分析

Using the diffusion of galium in SiO_2/Si series,Auger analysis of gallium-diffused silicon wafer is made.No heavy metal is found in SiO_2-p-type diffusion layer.This indicates that SiO_2 layer shields the heavy metal impurities effectively,and favors to improve the properties of electric parameter,the stability and reliability of silicon components.