%0 Journal Article
%T Auger Analysis on p-Type Diffusion Laye (Using Diffusion Galium in SiO2 Series)<br>p型扩散区(SiO_2/Si系扩Ga)的俄歇分析
%A Sun Ying
%A and Wang Fengying
%A <br>孙瑛
%A 王凤英
%J 半导体学报
%D 2002
%I 
%X Using the diffusion of galium in SiO_2/Si series,Auger analysis of gallium-diffused silicon wafer is made.No heavy metal is found in SiO_2-p-type diffusion layer.This indicates that SiO_2 layer shields the heavy metal impurities effectively,and favors to improve the properties of electric parameter,the stability and reliability of silicon components.
%K SiO_2 layer
%K gallium diffusion
%K heavy metal impurities
%K Auger analysis<br>SiO2层
%K 镓扩散
%K 重金属杂质
%K 俄歇分析
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=942EDF12F66A49D2&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=F3090AE9B60B7ED1&sid=61EDB4BBA42E40FF&eid=8AF49F1519D8BF1E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4