Several Key Processes for Integration of Resonant Tunneling Diodes and Pseudomorphic High Electron Mobility Transistors
RTD与PHEMT集成的几个关键工艺

Based on the new material structure for the integration of RTD devices and PHEMT devices,the fabrication processes of separate devices are systematically investigated and analyzed,and processes parameters are given.Besides,RTD devices and PHEMT devices according to these processes are fabricated successfully,and the electronics characteristics of fabricated RTD devices and PHEMT devices at room temperature are tested,respectively.These results show that the peak-to-valley current density ratio (PVCR) is increased to 1 78,the maximum transconductance is 120mS/mm and saturated current at V gs=0 5 is 270mA/mm.The research will be helpful to establish the complete processes for integration of RTD devices and PHEMT devices.