%0 Journal Article
%T Several Key Processes for Integration of Resonant Tunneling Diodes and Pseudomorphic High Electron Mobility Transistors<br>RTD与PHEMT集成的几个关键工艺
%A WANG Jianlin
%A Liu Zhongli
%A Wang Liangchen
%A Zeng Yiping
%A Yang Fuhua
%A Bai Yunxia
%A <br>王建林
%A 刘忠立
%A 王良臣
%A 曾一平
%A 杨富华
%A 白云霞
%J 半导体学报
%D 2005
%I 
%X Based on the new material structure for the integration of RTD devices and PHEMT devices,the fabrication processes of separate devices are systematically investigated and analyzed,and processes parameters are given.Besides,RTD devices and PHEMT devices according to these processes are fabricated successfully,and the electronics characteristics of fabricated RTD devices and PHEMT devices at room temperature are tested,respectively.These results show that the peak-to-valley current density ratio (PVCR) is increased to 1 78,the maximum transconductance is 120mS/mm and saturated current at V gs=0 5 is 270mA/mm.The research will be helpful to establish the complete processes for integration of RTD devices and PHEMT devices.
%K resonant tunneling diodes
%K pseudomorphic high electron mobility transistors
%K integrated circuits
%K processes<br>共振隧穿二极管
%K 高电子迁移率晶体管
%K 集成电路
%K 工艺
%K PHEMT
%K 集成电路
%K 关键工艺
%K Transistors
%K High
%K Electron
%K Mobility
%K Resonant
%K Tunneling
%K Diodes
%K Integration
%K 饱和电流
%K 跨导
%K 峰电流密度
%K 电学特性
%K 测试
%K 室温
%K 利用
%K 工艺参数
%K 制作工艺
%K 分立器件
%K 分析
%K 研究
%K 材料结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AC65183587E8A882&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=A22854835F81B3F8&eid=0BD4FAD4A90498AB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6