Si-H Bond and Photo-Induced Metastable Defects in a-Si:H
非晶硅中的硅氢键与光致亚稳缺陷

Earlier,the authors proposed that in a-Si:H, the creation of photo-induced metastable de-fects is due to the breaking of Si-H bonds.In this paper,the authors further discuss the pos-sible microscopic mechanism of the defect creation emphasizing the role of microvoids in suchprocess, and give an interpretation for the increase of weak Si-Si bonds after light soaking.