%0 Journal Article
%T Si-H Bond and Photo-Induced Metastable Defects in a-Si:H<br>非晶硅中的硅氢键与光致亚稳缺陷
%A Qin Guogang/Center of Condensed Matter
%A Radiation Physics CCAST
%A <br>秦国刚
%A 孔光临
%J 半导体学报
%D 1989
%I 
%X Earlier,the authors proposed that in a-Si:H, the creation of photo-induced metastable de-fects is due to the breaking of Si-H bonds.In this paper,the authors further discuss the pos-sible microscopic mechanism of the defect creation emphasizing the role of microvoids in suchprocess, and give an interpretation for the increase of weak Si-Si bonds after light soaking.
%K Amorphous silicon
%K Si-H bond
%K metastable defects
%K microvoids<br>非晶硅
%K 硅氢键
%K 亚稳缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=76740E364FAFE5AE&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=6C3EA4F7B6E5F836&eid=703F3C1B6594BA64&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2