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半导体学报 2000
High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers
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Abstract:
980nm InGaAs/GaAs/AlGaAs strained quantum well lasers have attracted considerable attentionas pumping sources for the Erbium-doped fiber amplifiers(EDFA) and solid-state lasers1,2].However,for InGaAs/GaAs/AlGaAs strained quantum well lasers,there liabilityist...