%0 Journal Article
%T High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers<br>High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers
%A XU Zun-tu
%A <br>徐遵图
%A 杨国文
%A 张敬明
%A 马骁宇
%A 徐俊英
%A 沈光地
%A 陈良惠
%J 半导体学报
%D 2000
%I 
%X 980nm InGaAs/GaAs/AlGaAs strained quantum well lasers have attracted considerable attentionas pumping sources for the Erbium-doped fiber amplifiers(EDFA) and solid-state lasers1,2].However,for InGaAs/GaAs/AlGaAs strained quantum well lasers,there liabilityist...
%K quantum well laser
%K high efficiency
%K Al\|free<br>InGaAs/InGaAsP/InGaP
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EB8C052692AFF8AF&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=84A93BA251D28205&eid=5335AD3CFE6E14EA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10