Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition
采用高真空 /快速热处理 /化学气相淀积外延SiGe HBT结构(英文)

The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.