%0 Journal Article
%T Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition<br>采用高真空 /快速热处理 /化学气相淀积外延SiGe HBT结构(英文)
%A JIA Hong-yong
%A LIN Hui-wang
%A CHEN Pei-yi
%A TSIEN Pei-Hsin
%A <br>贾宏勇
%A 林惠旺
%A 陈培毅
%A 钱佩信
%J 半导体学报
%D 2001
%I 
%X The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.
%K CVD
%K SiGe
%K HBT<br>化学气相淀积
%K SiGe
%K HBT
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=64DF15840602683D&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=38B194292C032A66&sid=4B1FFFA116F7AE3B&eid=627456E7977439A4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=7