Self-Aligned GaInP/GaAs HBT Device
自对准GaInP/GaAs HBT器件

A method to fabricate self-aligned GaInP/GaAs HBT devices is presented.With this method,f_t and f_max of the device can reach 54GHz and 71GHz respectively.This process is simple compared with othe r methods.The theoretical analysis about how to improve the RF characteristics o f these devices is also described.