%0 Journal Article
%T Self-Aligned GaInP/GaAs HBT Device<br>自对准GaInP/GaAs HBT器件
%A Qian Yongxue
%A Liu Xunchun
%A Wang Runmei
%A Shi Ruiying
%A <br>钱永学
%A 刘训春
%A 王润梅
%A 石瑞英
%J 半导体学报
%D 2002
%I 
%X A method to fabricate self-aligned GaInP/GaAs HBT devices is presented.With this method,f_t and f_max of the device can reach 54GHz and 71GHz respectively.This process is simple compared with othe r methods.The theoretical analysis about how to improve the RF characteristics o f these devices is also described.
%K HBT
%K GaInP/GaAs
%K T-emitter
%K lateral-cut<br>异质结双极晶体管
%K 镓铟磷/镓砷
%K T形发射极
%K 侧向内切
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E96C9297225EDAEC&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=94C357A881DFC066&sid=F9A6B6F259CE5121&eid=AF0641F74554D706&journal_id=1674-4926&journal_name=半导体学报&referenced_num=10&reference_num=8