Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET''''s
双栅和环栅MOSFET中短沟效应引起的阈值电压下降

Based on the charge sharing principle,the model of threshold voltage decreasing due to the short channel effect for double gate and surrounding gate MOSFET's is derived.The effects of channel doping,gate oxide thickness and silicon film thickness on the threshold voltage decreasing are analyzed by the model as well as by 2 D simulations.And the results from the model are agreed well with the simulation results.