%0 Journal Article
%T Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET''''s<br>双栅和环栅MOSFET中短沟效应引起的阈值电压下降
%A GAN Xue wen
%A WANG Xu she
%A ZHANG Xing
%A <br>甘学温
%A 王旭社
%A 张兴
%J 半导体学报
%D 2001
%I 
%X Based on the charge sharing principle,the model of threshold voltage decreasing due to the short channel effect for double gate and surrounding gate MOSFET's is derived.The effects of channel doping,gate oxide thickness and silicon film thickness on the threshold voltage decreasing are analyzed by the model as well as by 2 D simulations.And the results from the model are agreed well with the simulation results.
%K double
%K gate MOSFET
%K surrounding
%K gate MOSFET
%K charge
%K sharing
%K threshold voltage decreasing<br>双栅MOSFET
%K 环栅MOSFET
%K 电荷分享
%K 阈值电压下降
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DC212BD19AB132AE&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=59906B3B2830C2C5&sid=1593278DEEDA4D8F&eid=A7E1C896834B988A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=8