Pressure Behavior of In_xGa_(1-x)As/GaAs Strained Quantum Wells with Different Widths
不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为

The photoluminescence of In_xGa_(1-x)As/GaAs strained quantum wells with the widths of30A to 160 A have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is foundthat the pressure coefficients of exciton peaks from lst conduction subband to heavy hole sub-band increase from 9.74 meV/kbar of 160A well to 10.12 meV/kbar of 30 A well. The calcu-lation based on the Kronig-Penney model indicated that the extension of electronic wave fun-ction to barrier layer in the narrow wells is one of the reason for the increase of pressure-coefficients with the decrease of well width. Two peaks related to indirect transition were-observed at the pressure higher than 50 kbar.