%0 Journal Article
%T Pressure Behavior of In_xGa_(1-x)As/GaAs Strained Quantum Wells with Different Widths<br>不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为
%A 李国华
%A 郑宝真
%A 韩和相
%A 汪兆平
%J 半导体学报
%D 1991
%I 
%X The photoluminescence of In_xGa_(1-x)As/GaAs strained quantum wells with the widths of30A to 160 A have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is foundthat the pressure coefficients of exciton peaks from lst conduction subband to heavy hole sub-band increase from 9.74 meV/kbar of 160A well to 10.12 meV/kbar of 30 A well. The calcu-lation based on the Kronig-Penney model indicated that the extension of electronic wave fun-ction to barrier layer in the narrow wells is one of the reason for the increase of pressure-coefficients with the decrease of well width. Two peaks related to indirect transition were-observed at the pressure higher than 50 kbar.
%K Photoluminescence
%K Quantum well
%K Pressure<br>InGaAs／GaAs
%K 量子阱
%K 光致发光
%K 压力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9687A7AB570B121268046A05CEE63FBC&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=38B194292C032A66&sid=6425DAE0271BB751&eid=DD74772618543076&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6