Influence of Intrinsic Diffusion Caused by Neutral Vacancy on Arsenic Ion Redistribution during Annealing
中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响

The influence of the intrinsic diffusion D_i~0 caused by neutral vacancy on arsenic diffusioncoefficient is considered.It causes about 5-10% correction to the surface concentration N_s, junctiondepth X_j(t), etc. It is meaningful to include tie influence of D_i~0 in the analytical modelfor ion implantation annealing.