%0 Journal Article
%T Influence of Intrinsic Diffusion Caused by Neutral Vacancy on Arsenic Ion Redistribution during Annealing<br>中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响
%A Tang Tingao/Dept of E E
%A FUDAN University Shanghai China Zheng Dawei/Dept of E E
%A FUDAN University Shanghai China C A Paz de Araujo/University of Colorado at Colo
%A <br>汤庭鳌
%A 郑大卫
%A C.A.Paz de Araujo
%J 半导体学报
%D 1990
%I 
%X The influence of the intrinsic diffusion D_i~0 caused by neutral vacancy on arsenic diffusioncoefficient is considered.It causes about 5-10% correction to the surface concentration N_s, junctiondepth X_j(t), etc. It is meaningful to include tie influence of D_i~0 in the analytical modelfor ion implantation annealing.
%K Ion implantation
%K Annealing
%K Intrinsic diffusion Analytical model<br>离子注入
%K 退火
%K 本征扩散
%K 解析模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A514CE63C14A2694&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=D33D61F62E4C72A7&eid=6C62BFE34266FA92&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0