Improvement of GaAs Schottky Barriers by Using Substrate Negative Bias Presputtering in Nitrogen Ambience
氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善

The effect of negative bias presputtering in different ambiences on GaAs Schottky barriersis investigated.The electrical characteristics of the GaAs Schottky barrier are distinctly improved by using negative substrate bias presputtering in Ns ambience. The barrier height andthe reverse breakdown voltage are increased, and the diode capacitance is reducted. The newprocess is a very powerful technique for the improvement of the Schottky barreirs characteristicand GaAs MESFET.