%0 Journal Article
%T Improvement of GaAs Schottky Barriers by Using Substrate Negative Bias Presputtering in Nitrogen Ambience<br>氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善
%A Zhang Lichun/Institute of Microelectronics
%A Peking University Gao Yuzhi/Institute of Microelectronics
%A Peking University Ning Baojun/Institute of Microelectronics
%A Peking University Zhang Lu/Institute of Microelectronics
%A Peking University Wang Yangyuan/Institute of Microelectronics
%A Peking University
%A <br>张利春
%A 高玉芝
%A 宁宝俊
%A 张录
%A 王阳元
%J 半导体学报
%D 1990
%I 
%X The effect of negative bias presputtering in different ambiences on GaAs Schottky barriersis investigated.The electrical characteristics of the GaAs Schottky barrier are distinctly improved by using negative substrate bias presputtering in Ns ambience. The barrier height andthe reverse breakdown voltage are increased, and the diode capacitance is reducted. The newprocess is a very powerful technique for the improvement of the Schottky barreirs characteristicand GaAs MESFET.
%K Negative substrate bias presputtering
%K GaAs
%K Schottky barrier
%K Self-aligned GaAs MESFETs<br>GaAsMESFET
%K 肖特基势垒
%K 负偏压溅射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=56C1DC2E8A3152CE&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=D9D6C3CD78BED2C5&eid=6837BC93241057EF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=5