Effectof Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer
超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.