%0 Journal Article
%T Effectof Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer<br>超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)
%A Zhang Heqiu
%A Mao Lingfeng
%A Xu Mingzhen
%A Tan Changhua
%A <br>张贺秋
%A 毛凌锋
%A 许铭真
%A 谭长华
%J 半导体学报
%D 2002
%I 
%X The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.
%K tunneling current
%K high- field stress
%K ultrathin
%K SIL C<br>隧穿电流
%K 高场应力
%K 超薄
%K 应变诱导漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C34E0A5822DAE728&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=4C2B9916B58305BE&eid=965F4E89CD0AFC30&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1