Investigation on Interfaces in Amorphous Silicon/Carbon Superlattices
a-Si:H/a-C:H超晶格的界面研究

The interfacial structure and spin density in a-Si:H/a-C:H superlattices made by GD pro-cess have been investigated by means of TEM and ESR measurements,respectively.The re-sults obtained show an indication of an excess transition layer near the interfaces,the thicknessof which is in the range of 6-15A. A large excess spin density, in the order of 10~(13)cm~(-2), nearthe interfaces is also observed, which may be attributed to the interface mismatch betweenamorphous silicom and carbon sublayers.